High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

• Vadim B. Platonov,
• Marina N. Rumyantseva,
• Alexander S. Frolov,
• Alexey D. Yapryntsev and
• Alexander M. Gaskov

Beilstein J. Nanotechnol. 2019, 10, 1537–1547, doi:10.3762/bjnano.10.151

• an n–n heterojunction at the ZnO/SiC interface. Keywords: electrospinning; high temperature gas sensor; n–n heterojunction; ZnO/SiC nanocomposite; Introduction The risk of air pollution is growing due to the development of new technologies in the chemical, metallurgical and food industries, the use

• interpreted in the context of the assumption of the formation of an n–n heterojunction at the ZnO/SiC interface, resulting in electron transfer from SiC to ZnO. The increase in the concentration of electrons in the near-surface layer of ZnO leads to an increase in the concentration of chemisorbed oxygen on

Nanocrystalline TiO₂/SnO₂ heterostructures for gas sensing

• Barbara Lyson-Sypien,
• Anna Kusior,
• Mieczylaw Rekas,
• Jan Zukrowski,
• Marta Gajewska,
• Katarzyna Michalow-Mauke,
• Thomas Graule,
• Marta Radecka and
• Katarzyna Zakrzewska

Beilstein J. Nanotechnol. 2017, 8, 108–122, doi:10.3762/bjnano.8.12

• an n–n heterojunction, b) electron transfer from a TiO2 to a SnO2 grain providing active gas adsorption sites. EF: Fermi energy, EVB: valence band maximum energy, ECB: conduction band minimum energy, Eg: energy band gap, e−: electron, O−: singly ionized oxygen adatom. Comparison between XRD patterns